smd type transistors sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1 base 2 collector 3 emitter features 60 volt v ceo. 3 amp continuous current. low saturation voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5v peak pulse current i c 3a continuous collector current i cm 6a power dissipation p tot 2w operating and storage temperature range t j, t stg -55to+150 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors FZT651 product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =100a 80 v collector-emitter breakdown voltage * v (br)ceo i c =10ma 60 v emitter-base breakdown voltage v (br)ebo i e =100a 5v collector cut-off current i cbo v cb =60v v cb =60v,ta = 100 0.1 10 a emitter cut-off current i ebo v eb =4v 0.1 a collector-emitter saturation voltage * v ce( sat) i c =1a, i b =100ma i c =3a, i b =300ma 0.12 0.43 0.3 0.6 v base-emitter saturation voltage * v be( sat) i c =1a, i b =100ma 0.9 1.25 v base-emitter turn-on voltage * v be(on ) i c =1a, v ce =2v 0.8 1 v i c =50ma, v ce =2v* 70 200 i c =500ma, v ce =2v* 100 200 300 i c =1a, v ce =2v* 80 170 i c =2a, v ce =2v* 40 80 transitional frequency f t i c =100ma, v ce =5v f=100mhz 140 175 mhz output capacitance c obo v cb =10v, f=1mhz 30 pf t on 45 ns t off 800 ns * pulse test: tp = 300 s; d 0.02. i c =500ma,v cc =10v,i b1 =i b2 =50ma h fe static forward current transfer ratio switching times FZT651 marking marking FZT651 sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
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